The Effect of Interfacial Treatment to Metal Interface and pecific Contact Resistivity Measurement of Metal Interface
碩士 === 臺灣大學 === 光電工程學研究所 === 95 === As CMOS devices are scaled down, gate electrode and insulate layer will also be scaled down in order to decrease the IC area. The poly depletion on poly silicon gate electrode will dominated total efficiency of the device, to use the metallic material as gate elec...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57621302917042393226 |
| Summary: | 碩士 === 臺灣大學 === 光電工程學研究所 === 95 === As CMOS devices are scaled down, gate electrode and insulate layer will also be scaled down in order to decrease the IC area. The poly depletion on poly silicon gate electrode will dominated total efficiency of the device, to use the metallic material as gate electrode can not only eliminate it but also provide lower gate electrode resistivity. The work function of the metals for NMOS and PMOS should be similar to that of n-Si and p-Si. However there is no clear conceptual understanding of how to design an interface with a given effective work function. In this thesis, we had find out some interfacial treatment that can shift metal gate work function form -0.2eV to +0.3eV. Beside, we had combine 4-point probe measurement principle on TLM pattern to measure NiSi ohmic contact resistivity.
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