The Effect of Interfacial Treatment to Metal Interface and pecific Contact Resistivity Measurement of Metal Interface
碩士 === 臺灣大學 === 光電工程學研究所 === 95 === As CMOS devices are scaled down, gate electrode and insulate layer will also be scaled down in order to decrease the IC area. The poly depletion on poly silicon gate electrode will dominated total efficiency of the device, to use the metallic material as gate elec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57621302917042393226 |