Fabrication and Characterization of InGaNO-based Phase Change Memory Devices
碩士 === 國立臺灣大學 === 光電工程學研究所 === 95 === We demonstrate a new type of phase change material (PCM) device based on InGaNO. The characteristic changes of InGaON-based PCM were compared with the conventional GST PCM device by using X-ray diffraction (XRD), circular transmission line method (CTLM), and di...
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| Format: | Others |
| Language: | zh-TW |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04955180011245154099 |
| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 95 === We demonstrate a new type of phase change material (PCM) device based on InGaNO. The characteristic changes of InGaON-based PCM were compared with the conventional GST PCM device by using X-ray diffraction (XRD), circular transmission line method (CTLM), and differential scanning calorimeter (DSC). We denote a phase transition from amorphous structure into cubic bixbyite crystal in the InGaON system between 275 to 290 degrees in Celsius, , while for GST a fcc and a hcp phase change occurs at the temperature 150 and 300 degrees in Celsius successively. The InGaNO-based PCM device exhibits a higher ON/OFF resistance ratio of ~100 compared to a ratio of ~30 in the GST PCM system.
Using a 0.18 um-dia heating structure with a contact area of 2.06 um^2, we observed a small reset current of IRESET ~ 680
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