Fabrication and Characterization of InGaNO-based Phase Change Memory Devices
碩士 === 國立臺灣大學 === 光電工程學研究所 === 95 === We demonstrate a new type of phase change material (PCM) device based on InGaNO. The characteristic changes of InGaON-based PCM were compared with the conventional GST PCM device by using X-ray diffraction (XRD), circular transmission line method (CTLM), and di...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04955180011245154099 |