Improvement of the Light Output Power of InGaN/GaN Based Light Emitting Diodes by Using Current Diverting Structure
碩士 === 國立臺灣大學 === 光電工程學研究所 === 95 === In this research, we fabricate the current diverting structure by using ion implantation technology. With this structure, we can change the current flowing path to improve current spreading of the device and reduce current crowding effect. By reducing the light...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/53296533104571721112 |