Preparation and Characterizations of ZnO Doped with Al and Ga by Electron-Beam Evaporation
碩士 === 國立臺灣海洋大學 === 材料工程研究所 === 95 === Abstract Aluminum-doped zinc oxide and gallium-doped zinc oxide films have been prepared by electron beam evaporation onto the glass substrates with different substrate temperatures and oxygen work pressures. Based on the effect of substrate temperature, the ex...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96248964255181959216 |
| Summary: | 碩士 === 國立臺灣海洋大學 === 材料工程研究所 === 95 === Abstract
Aluminum-doped zinc oxide and gallium-doped zinc oxide films have been prepared by electron beam evaporation onto the glass substrates with different substrate temperatures and oxygen work pressures. Based on the effect of substrate temperature, the experimental results show that the lowest resistivity of AZO(2wt%) and GZO(2wt%) films are，respectively，29000 μΩ-cm and 2400 μΩ-cm at 1570C and transmittance of films are all above 80% at 2200C. Based on the effect of oxygen work pressure, it shows that transmittance of AZO(2wt%) and GZO(2wt%) films increases when oxygen work pressure increases. GZO(2wt%) films show the best optical and electric properties in all films and transmittance and resistivity are， respectively，90.4 % at 7.5×10-4 Torr and 2400 μΩ-cm at 1.0×10-4 Torr. SEM observations reveal that the number and size of grains on surface structure of films have no obvious effect on transmittance of all films. From XRD, we found the main factor affecting transmittance is crystallinity because transmittance of films increases with intensity of diffraction peak . Among all films, GZO(2wt%) films evaporated at oxygen work pressure 1.0×10-4 Torr is the best transparent conductive oxide film and transmittance and resistivity are，respectively，88.1 % and 378 μΩ-cm. The properties of GZO(2wt%) films are also comparable with that of commercial ITO films.
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