The Study of Inductively Coupled Plasma etching of HfAlO Based MOSFET
碩士 === 國立清華大學 === 工程與系統科學系 === 95 === The etching properties of HfAlO, HfO2 and silicon wafer with pattern were investigated using inductively coupled high density plasma etcher. To develop plasma etch process of high dielectric gate oxide. The effects of the experimental parameters, including ICP p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87984734859322402394 |