Novel Nanowire SONOS TFTs Functioned as Nonvolatile Memory and Transistor
博士 === 國立清華大學 === 電子工程研究所 === 95 === In first part, presents a method to enhance the performance of polycrystalline silicon thin film transistors (ploy-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the...
Main Authors: | Shih-Ching Chen, 陳世青 |
---|---|
Other Authors: | Chen-Hsin Lien |
Format: | Others |
Language: | zh-TW |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/94449017372591563788 |
Similar Items
-
Nonvolatile SONOS-TFT Memory with Nanowire Structure
by: Jing-yi Chin, et al.
Published: (2007) -
Study of Gate-All-Around Poly-Si Nanowire TFTs as Nonvolatile Memory
by: Chen, Lu-An, et al.
Published: (2009) -
Ambipolar germanium nanowire transistors and their nonvolatile memory applications
by: Chao-Fu Chen, et al.
Published: (2015) -
Ge QD SONOS nonvolatile Floating-dot transistors
by: Po-Hao Tseng, et al.
Published: (2010) -
Study on Physics Mechanism of Novel Nonvolatile SONOS-TFT Memory
by: Chang, Geng-Wei, et al.
Published: (2009)