Stack Capacitors for Next-generation DRAM Technologies─Structural / Capacitance Analysis and Design
碩士 === 國立清華大學 === 動力機械工程學系 === 95 === In order to meet the requirement of the next-generation DRAM technology for higher density memories, the capacitance per memory cell needs to be increased and the storage node should be prevented from twin bit failure. The objective of this work is to estimate t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39282480363321537237 |