The development and application of the ultra-nano crystalline diamond film in field emission device

• Main Authors: Chun-Cheng Liu, 劉竣誠
• Other Authors: Nyan-Hwa Tai
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/41702858328946360225

碩士 === 國立清華大學 === 材料科學工程學系 === 95 === In this work, the ultra-nano crystalline diamond film(UNCD) was grown on the molybdenum(Mo-Si)、tungsten(W-Si) films and molybdenum(Mo-B)、tungsten(W-B) bulks by microwave plasma enhanced chemical vapor deposition(MPECVD). The XRD and XPS analysis showed there is metallic carbide forming in the interface between diamond and metal films. In contrast, there is no metallic carbide forming between diamond and metal bulks. From SEM measurement, diamond deposited on the W-Si film was faster than on the Mo-Si film. The SEM also showed the grow rate in films are faster than bulks. Diamond film can be well patterned by dry etching of oxygen plasma. Using Al film be a mask, The diamond film can be pattern to produce 2-D lateral field emitter and 3-D field emitter. After hydrogen plasma treatment, the maximum current density can up to 3400 mA/cm2.XPS analysis also showed the surface of diamond was hydrogenated by hydrogen plasma. The other way to produce diamond film devices is selective area deposition(SAD). Taking Al and TiN as sacrificial layer, successfully pattern diamond by wet-etching process.