Resistance switching characteristics of TiO2 films deposited by MOCVD
碩士 === 國立清華大學 === 材料科學工程學系 === 95 === Abstract The TiO2 films for non-volatile memory applications were prepared on Pt bottom electrode by metal-organic chemical vapor deposition (MOCVD) method. The Pt top and bottom electrodes were made in symmetric metal-insulator-metal (MIM) structure. In order t...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50136431506004967889 |