Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration
碩士 === 國立清華大學 === 材料科學工程學系 === 95 === Nanoelectrodes with nanometer separation (nanogap) are achieved by the combination of atomic force microscopy nanomachining and electromigration. By controlling the force of an atomic force microscopy (AFM) tip on a thin PMMA resist, a nanoscale groove is first...
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ndltd-TW-095NTHU51590302015-10-13T14:08:38Z http://ndltd.ncl.edu.tw/handle/97635568039389173462 Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration 利用原子力顯微術之機械力微影及電致遷移製作奈米電極 Ying-Fang Chen 陳盈方 碩士 國立清華大學 材料科學工程學系 95 Nanoelectrodes with nanometer separation (nanogap) are achieved by the combination of atomic force microscopy nanomachining and electromigration. By controlling the force of an atomic force microscopy (AFM) tip on a thin PMMA resist, a nanoscale groove is first created. By coating a gold film and performing a lift-off process, a gold nanowire with a width which ranges from 50 nm to 90 nm is successfully fabricated. Afterwards, by combining the photolithography with the process above, a pair of contact pads connecting a metallic nanowire is created. Then the nanowire is indented by AFM nanomachining. By measuring IV characteristic of the nanowire, the indented nanowire without splitting is assured. By externally applying a bias voltage (sweeping rate= 0.02V/sec) across the gold nanowire, the nanowire would split because of the occurrence of electromigration as the current density exceeds the critical value of 108 A/cm2. Therefore, the nanoelectrodes with the separation around 10 nm at the indented site can be realized. And the AFM nanomachining is utilized to control the site of nanowire’s split. Heh-Nan Lin 林鶴南 2007 學位論文 ; thesis 51 en_US |
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碩士 === 國立清華大學 === 材料科學工程學系 === 95 === Nanoelectrodes with nanometer separation (nanogap) are achieved by the combination of atomic force microscopy nanomachining and electromigration. By controlling the force of an atomic force microscopy (AFM) tip on a thin PMMA resist, a nanoscale groove is first created. By coating a gold film and performing a lift-off process, a gold nanowire with a width which ranges from 50 nm to 90 nm is successfully fabricated. Afterwards, by combining the photolithography with the process above, a pair of contact pads connecting a metallic nanowire is created. Then the nanowire is indented by AFM nanomachining. By measuring IV characteristic of the nanowire, the indented nanowire without splitting is assured. By externally applying a bias voltage (sweeping rate= 0.02V/sec) across the gold nanowire, the nanowire would split because of the occurrence of electromigration as the current density exceeds the critical value of 108 A/cm2. Therefore, the nanoelectrodes with the separation around 10 nm at the indented site can be realized. And the AFM nanomachining is utilized to control the site of nanowire’s split.
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author2 |
Heh-Nan Lin |
author_facet |
Heh-Nan Lin Ying-Fang Chen 陳盈方 |
author |
Ying-Fang Chen 陳盈方 |
spellingShingle |
Ying-Fang Chen 陳盈方 Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
author_sort |
Ying-Fang Chen |
title |
Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
title_short |
Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
title_full |
Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
title_fullStr |
Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
title_full_unstemmed |
Fabrication of Nanoelectrodes by Atomic Force Microscopy Nanomachining and Electromigration |
title_sort |
fabrication of nanoelectrodes by atomic force microscopy nanomachining and electromigration |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/97635568039389173462 |
work_keys_str_mv |
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