Determination of trace contamination in Si semiconductor : metal impurities in photoresist raw material、environmental ammonia sources in photolithography cleanrooms,and organic contaminants in pad

博士 === 國立清華大學 === 化學系 === 95 === Until recently, there are many product classes of semiconductors, such as MOS memory devices, and the widespread applications include LCD TV, global positioning satellite receive et al. Based on economic benefit, circuit geometries continue to shrink from micrometer...

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Bibliographic Details
Main Authors: Li-Chen Chen, 陳麗真
Other Authors: Yong-Chien Ling
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/49920778130606654209
Description
Summary:博士 === 國立清華大學 === 化學系 === 95 === Until recently, there are many product classes of semiconductors, such as MOS memory devices, and the widespread applications include LCD TV, global positioning satellite receive et al. Based on economic benefit, circuit geometries continue to shrink from micrometer to deep-submicrometer (< 0.13 �慆). For the submicrometer and deep-submicrometer technology nodes, in addition to metals and particles, airborne molecular are suspected to be among the critical contaminants. For example, acid gases and volatile organic compounds can cause corrosion and buildup to lead to increase maintenance cycles. Many study show that process chemicals in use today are even quite pure but can easily be contaminated with metals through improper handing or storage techniques. For all of these reasons, chemical analysis technologies, such as assay of acid/base chemicals using titrator, metal impurities of chemicals and DI water using ICP-MS, ammonium level of environment using IC (ion chromatography) and volatile organic using GC-MS, are necessary to control a variety of contaminants. The data presented in this paper evidently show the universal application of chemical analysis for semiconductor manufacturing. For example : (1) Incoming quality control : New digestion method using high quality of synthetic quartz beaker、high-purity chemicals、applicable temperature for solvent evaporation and open-vessel high temperature furnace heater which temperature is up to 1000℃ could diminish an experimental blank of Na, Mg , Al, Fe, and Ca from non- detection to 0.098 µg/ml and matrix interference to permit the determination of Mn, Cu, Al, and Fe in photoresists at detection limits within the range from 0.002 to 0.073µg/ml to meet the requirement of next generation. (2) Environmental monitor: The acceptable monitor condition including high purity of sampling material such as D.I. H2O, quartz impinger, high sampling flow rate, and available concentration parameter could diminish an experimental blank of ammonia much less 0.18 ppb to permit the determination of environmental ammonia at detection limit up to 0.09 ppbv. The trend of environmental ammonia monitor could show many contamination sources of ammonia in photolithography cleanroom, such as make-up air、leaking chemical、construction materials、engineering work and N2 purge-gun. (3) Failure analysis : The analysis method including microstructure element analysis (EDS/SEM)、specific preparation method and chemical composition analysis (GC/MS) could distinguish three kinds of discolored pad into three different contamination sources (sponge, black static electricity sheet and blue tape). Therefore, chemical analysis is important to semiconductor industry including manufacturing process, environmental monitoring, and failure analysis.