A Novel device consisting of MOSFET with Resonance Inter-band Tunneling Diode
碩士 === 國立中山大學 === 電機工程學系研究所 === 95 === This thesis focuses on combination of RITD (Resonant Inter-band Tunneling Diode) in MOS (Metal Oxide Semiconductor). Such new device gives architecture, applying to a latch theory and produces a stable, robust output working voltage. This output voltage can ind...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/j8c3g5 |