The fabrication of thin-film bulk acoustic resonator
碩士 === 國立中山大學 === 電機工程學系研究所 === 95 === In this study, the FBAR devices fabrication was used by back-etched type. The titanium (Ti) seeding layer and platinum (Pt) bottom electrode were deposited by DC sputtering system using a dual gun. To improve the platinum (Pt) adhesion, a seeding layer titanium...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z534fe |