Characterization of Titanium Silicon Oxide Prepared by Liquid Phase Deposition
碩士 === 國立中山大學 === 電機工程學系研究所 === 95 === When the size of display panel increased, the RC delay of TFTs became serious.In order to solve this problem, it is necessary to incorporate a high dielectric (high-k) material used as the gate oxide can increase the gate oxide capacitance Co, which can induce...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/23f9qh |