Nonvolatile SONOS-TFT Memory with Nanowire Structure
碩士 === 國立中山大學 === 物理學系研究所 === 95 === The conventional floating gate NVSM will suffer some limitations for continued scaling of the device structure. Therefore, the silicon-oxide-nitride-oxide-silicon (SONOS) and the nanocrystal nonvolatile memory devices, have been investigated to overcome the limit...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wdsj9d |