Study of Advance Tungsten Nano-crystal for Non-Volatile Memory Device Application
碩士 === 國立中山大學 === 光電工程研究所 === 95 === Recently, memory-cells employing discrete traps as the charge storage media have been attracting a lot of attention as a promising candidate to replace conventional DRAM or Flash memories. Conventional floating gate (FG) non-volatile memories (NVMs) present criti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8ctkby |