Fabrication and characterization of Indium oxide thin film transistors at room temperature.
碩士 === 國立中山大學 === 光電工程研究所 === 95 === Transparent thin film transistors fabricated at room temperature by radio frequency magnetron sputtering using indium oxide material system were proposed. The electrodes of the transparent thin film transistors were obtained by depositing indium oxide with 10% ti...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/6y3646 |