| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 95 === In this research, we employed an MOCVD system to produce ZnO film, which has superior (002) preferred orientation and large grain size. We use DMZn, in place of DEZn as the zinc precursor. We discussed the dependence of film characteristics on several different parameters. We changed the VI/II by changing DMZn vapor pressure, oxygen precursor, and oxygen flows, and also changed the growth temperature and annealing time, to study the dependence of morphology, (002) preferred orientation, crystal quality and photoluminescence.
We have successfully prepared the ZnO epitaxial film of large grain size by controlling process parameters. By adjusting other parameters, the grain sizes of the film all reach above 100 nm, regardless of whether using oxygen or carbon dioxide as oxygen precursors. After annealing, the grain size of ZnO film reach 300 nm, and grains have much better (002) orientation, and photoluminescence. The MOCVD system is an effective method to prepare epitaxial ZnO film.
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