Studies of GaN-Based Heterojunction Bipolar Transistors
博士 === 國立中央大學 === 電機工程研究所 === 95 === In recently years, the commercial outlook for GaN optoelectronic and electronic devices has grown considerably. GaN-based transistors, such as AlGaN/GaN high electron mobility transistors, are capable of delivering the high-power density under the harsh and high-...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/40447326941735474681 |