Study of Au-Si Wafer Bonding for Thin-GaN Light Emitting Diodes Fabrication
博士 === 國立中央大學 === 化學工程與材料工程研究所 === 95 === Using Au-Si wafer bonding and LLO (Laser Lift-Off) techniques, an LED (Light Emitting Diode) GaN epi-layer was successfully transferred onto a Si substrate. After the wafer bonding, a KrF excimer laser was used to separate the GaN layer from the grown sapph...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96088690214917250922 |