Study of copper etching and protection

• Main Authors: Cheng-Hao Jhang, 張程皓
• Other Authors: 曹恒光
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/28375308952883348237

碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 95 === In this studying we can know that semi conduction production process, especially the Post Chemical mechanical Polishing (Post CMP) is very important. Post CMP caused copper wafer surface be etched. Reduction copper surface etching is our purpose. We detect copper etching due to copper oxide therefore oxygen scavenger can reduction etching rate. We have two methods to prevention etching that additive oxygen scavenger and film-forming agent. Additional film-forming agent should be considered removal that measurement of contact angle to help we analysis. Example, DI-water wet on the fresh copper surface that contact angle is 70o and deposit BTA is 80o then we add hydrazine detection contact angle to return 70o and BTA be moved. The UV-Vis spectrum of reduction.