Study of N-type Poly-Si TFTs Degradation Under Gate Pulse Stress in Off Region with Drain Bias

碩士 === 國立交通大學 === 顯示科技研究所 === 95 === Polycrystalline silicon (poly-Si) thin film transistors (TFTs) have recently attracted much attention in the application on the integrated peripheral circuits of active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diode (AMOLE...

Full description

Bibliographic Details
Main Authors: Wei-Lun Shih, 施偉倫
Other Authors: Ya-Hsiang Tai
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/00388523289196745631