Study on Novel Structures for Flash Memory using HfO2 as Charge Trapping Layer with SiGe and Si Channels

• Main Authors: Jin-Shi Hong, 洪錦石
• Other Authors: Tan-Fu Lei
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/77245589405652646983

碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === In this paper, we develop novel structure flash memory by using SiGe channel. The trapping layer use HfO2 and HfSiOx materials. Then, we fabricate p-channel SONOS-type flash memory with HfSiOx trapping layer devices. Experimental characteristics result large memory windows, relative high P/E speed and good retention for our SiGe channel memory and p-channel SONOS-type nonvolatile flash memory. First, the SiGe channel flash memories by using high-k dielectric materials hafnium oxide trapping layer were proposed and demonstrated. Decreasing to process temperature was used to avoid germanium precipitated in our device. Low temperature oxy-nitride layer was used for tunneling layer. For the memory operation, we use CHE programming and BTBHH erasing. Experimental characteristics result large memory windows, relative high P/E speed and good retention. Next, the SiGe channel flash memory by using materials hafnium silicate trapping layer were proposed and demonstrated. We use CHE programming and BTBHH erasing for the memory operation. Experimental characteristics result large memory windows, relative high P/E speed, two-bit application, good retention and disturbances. Finally, the p-channel SONOS-type flash memory using HfO2 nanocrystal trapping layer has been fabricated. The experimental results show that the samples have large memory windows, good retention, high P/E speed.