Study on Novel Structures for Flash Memory using HfO2 as Charge Trapping Layer with SiGe and Si Channels
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 95 === In this paper, we develop novel structure flash memory by using SiGe channel. The trapping layer use HfO2 and HfSiOx materials. Then, we fabricate p-channel SONOS-type flash memory with HfSiOx trapping layer devices. Experimental characteristics result la...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/77245589405652646983 |