Using OES to Predict Nitrogen Concentration for Plasma Nitrided Gate Oxide Process and Applications
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 95 === Due to the driving force of the manufacturing cost and device performance in the semiconductor industry, the transistor density has been continuously doubled in every year. Consequentially the transistor is also constantly down scaling. Therefore, lo...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/12481570868588281895 |