The effect of X-ray irradiation on the DNQ-Novolak type photoresist

• Main Authors: Hsiung-Min Lin, 林勳銘
• Other Authors: Fu-Hsiang Ko
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/09397553232054004433

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 95 === With the flourishing development of photolithographic technology，it allows semiconductor technology to design more circuits in same area。Hence，faster，more multifunction and bigger capacity electronic products are available。The photoresist playing the key role in photolithographic technology is getting brand-new development from earlier broadband to now divided to optical and non-optical technology，the optical trend has been developed from 436nm and 365nm，gradually toward to short wavelength such as X-ray。However，to find out appropriate resist is a major problem。In this study，we used the DNQ/Novolak photoresist that is used in 365nm wavelength instead of PMMA resist used in X-ray，From experiment，it figure that the exposure energy of the X-ray is the factor to decide the resist is positive or negative under low dosage of X-ray，the resist thickness will be decreased with increasing energy，the developer will be finished working at a certain time when some critical line is arrived，it`s so called Eo。The Novolack resin will be breakdown to produce free radical to make cross-linkage by high dosage of X-ray，the cross-linkage will enhance the inner strength and lower the solubility in developer；if used appropriate developer，aims and the negative resist would be produced. The purpose of this article is to make fine DNQ/Novolak to proceed and evaluate the effect by photolithographic procedure，and to discuss the images and analyze the features of photoresist under various kinds of exposure dosages。