Formation of Nitride Laser Diode Cavities with Cleaved Facets By Wafer-Bonding and Laser Lift-Off
碩士 === 國立交通大學 === 電子物理系所 === 95 === Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor deposition (MOCVD) on c-pl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85145511657750186359 |