| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 95 === There are two major part in this research. In part one, we use the sample with the structure of Sapphire/SiO2/Al as anode and apply with voltage. In this way, Al layer will be oxidized into anodic aluminum oxide(AAO). By using different two step anodization condition and pore widening time, we can get the AAO film with different pore aspect ratio(pore depth/pore diameter). In part two, we make use of these AAO film with different aspect ratio as etching masks. Then, we use ICP etching to transfer the nano-porous pattern from AAO to SiO2. From experimental result, we find The low pressure ICP condition (5mTorr) has better etching profile on SiO2 than the high pressure ICP condition (50mTorr). However, the low pressure condition do some damage to AAO etching mask. Besides, the pore aspect ratio of AAO affect the result of pattern transfer. In this research, we find that the aspect ratio within 7.5~12 range will lead to success of pattern transfer. Finally, we demonstrate fabrication of the same structure on 2 inch Sapphire wafer successfully.
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