Spin filtering in 2D double barrier semiconductor structures
碩士 === 國立交通大學 === 電子工程系所 === 95 === In this report, we propose a device made of GaAs/InAs/GaAs, and by the double gates there is a potential barrier induced on the channel. In the presence of spin orbit interaction, there is an energy difference between the opposite spin orientation electrons. That...
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| Format: | Others |
| Language: | en_US |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98000880910739409119 |