Investigation of Surface Treatment Before and After High-k(HfAlO) Dielectric Deposition
碩士 === 國立交通大學 === 電子工程系所 === 95 === In recent years, a lot of research effort has been focused on developing alternative gate dielectric materials to replace SiO2. Using high dielectric constant provide the way to make the semiconductor roadmap go on, and overcome the present physical limits of semi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09716073213088024711 |