Study of GaN Epitaxial Growth on Sapphire (0001) and Silicon (111) by Molecule Beam Epitaxy System
碩士 === 國立交通大學 === 電子工程系所 === 95 === The high quality of GaN epilayer successfully was grown on sapphire and silicon substrates by Molecule Beam Epitaxy (MBE) system. To achieve high quality GaN epilayer on sapphire, the nitridation treatment is necessary for growing GaN epilayer. The overall threadi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88601858577704454922 |