Investigation of HfO2/SiON and HfAlO/SiON gate stack on the Characteristics of MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 95 === As the conventional SiO2-based gate insulator scales down to 1.0nm~1.5nm, a large direct tunneling current generates through ultra-thin oxide which cause a serious degradation in reliability and performance of device. Utilizing high-k dielectric to replace SiO2-b...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16983261458616990175 |