New Advanced Process of Ultrathin Oxynitride on the Characteristics of nMOSFET
碩士 === 國立交通大學 === 電子工程系所 === 95 === Abstract According to the scaling rules, aggressive scaling has lead to silicon dioxide (SiO2) gate dielectrics as ultra thin in state-of-the-art CMOS technologies. As a consequence, static leakage current due to direct tunneling through the gate oxide has been in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77138092060810623076 |