The Study of InAlAs/InGaAs Metamorphic High Electron Mobility Transistors for High Frequency Applications
博士 === 國立交通大學 === 材料科學與工程系所 === 95 === High performance InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) have been fabricated and characterized for high frequency applicatiions. The performance of the MHEMTs was improved by optimizing the device structure and reducing the gate l...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19212185680445263000 |