Investigation and Fabrication of Double-Heterojuction Metal-Oxide-Semiconductor FETs Using Photoelectrochemical oxide Method
碩士 === 國立成功大學 === 光電科學與工程研究所 === 95 === An oxide layer with low interface trap density has been grew on AlGaN directly by PEC method and applied on metal-oxide-semiconductor field effect transistor. The growth rate is about 3 nm/min in H3PO4 electrolytic solution with pH value of 3.5 and biased at 1...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03699253847753146631 |