Investigation of Electrical Characteristics of KF Low-k Dielectric Material
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 95 === In this thesis, interaction between copper electrode and low dielectric constant KF ( Carbon-Doped silicon Oxide, CDO ) film was demonstrated. The Metal-Insulation-Semiconductor (MIS) capacitors were fabricated with a copper electrode. The breakdown electrical...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/25682379196474455954 |
| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 95 === In this thesis, interaction between copper electrode and low dielectric constant KF ( Carbon-Doped silicon Oxide, CDO ) film was demonstrated.
The Metal-Insulation-Semiconductor (MIS) capacitors were fabricated with a copper electrode. The breakdown electrical field was as high as 8.3 MV/cm under strict Bias Temperature Stress ( BTS ) conditions ( at 1 MV/cm and 170oC for 1000 sec ).
In this work, we have investigated the relationship between leakage current and electrical field. We also have analyzed which transport mechanism is dominated.
Finally, the resistant capability of Cu diffusion in KF film was verified with Cu diffusion rate measured by C-V characteristics.
|
|---|