The Effect of Device Dimension on Hot Carrier Reliability of n-type LDMOS Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === In this thesis, device characteristics and hot carrier reliability of n-type LDMOS transistors with different device dimension are investigated. The device used in this thesis has three main layout parameters L, b, and S1, which corresponds to channel length...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94076197495692786908 |