Study of Zn-base II-VI materials and their application of optoelectronic devices
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === We investigated ZnO epitaxial films were grown on nitrided sapphire substrates by molecular beam epitaxy (MBE). The small x-ray diffraction full-width-half-maximum (FWHM) was 452 arcsec and sharp and strong excitonic related photoluminescence peak located at...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/76928255874571455169 |