Investigation of High-Brightness GaN Light-Emitting Diodes with Copper Substrate
碩士 === 國立中興大學 === 精密工程學系所 === 95 === In general, the structure of GaN light-emitting diode is commonly epitaxially grown on sapphire substrate. The large joule heat is generated from the active layer during high current injecting. That could degrade the performance of device because the low thermal...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/63474241456853741557 |