Effects of Backside Metal Reflectors on Performace of GaN Light-Emitting Diodes

碩士 === 國立中興大學 === 精密工程學系所 === 95 === The effect of backside aluminum (Al) reflectors on the performance of GaN light-emitting diodes (LEDs) was investigated in this thesis. For a typical chip process line, the backside Al coating on a sapphire substrate can enhance the external quantum efficiency ex...

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Bibliographic Details
Main Authors: Chang-hsin Li, 李長信
Other Authors: 武東星
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/76385885189205661269