The high-efficiency InGaN-based Light-Emitting Diode With Current Blocking Layer
碩士 === 國立中興大學 === 精密工程學系所 === 95 === In this thesis, the output power enhancement of the InGaN-based light-emitting diode was discussed by adding the current blocking layer. The SiO2 current blocking layer was defined on the mesa region under the p-type electrode. The injection current was blocked a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/70634101846440180209 |