Excess Noise Properties of GaN Nanowires
博士 === 國立中興大學 === 物理學系所 === 95 === In this study, we examine the properties of the low-frequency excess noise of the GaN nanowires, which are grown by Vapor-Liquid-Solid method. The diameter of these nanowires is about 80 to 150nm. The 300-400 nm-wide Al electrodes to the nanowires are defined by e-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59670335579809435652 |