Optical and Electrical Properties of GaN-based Nanoporous Structures

碩士 === 國立中興大學 === 材料工程學系所 === 95 === In this thesis, the nanoporous p-type GaN:Mg structures were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaN/GaN multi-quantum-well (MQW) structures were enhanced by...

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Bibliographic Details
Main Authors: Cheng-Chian Chang, 張政謙
Other Authors: Chia-Feng Lin
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/34693841463603911495