Study of Relax Thin Film Si1-xGex by Gas Type Ion Implantation
碩士 === 明新科技大學 === 化學工程研究所 === 95 === Recently, the applications of relaxed SiGe layers in the silicon-based electronics and photonic devices attract many attentions. The high carrier mobility of silicon channel through the adjustable lattice constant, designed energy band and defect engineering can...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29799391951730782195 |