Preparation of PZT thin films for micro force sensor applications

• Main Authors: Yi-Jia Tsai, 蔡怡迦
• Other Authors: Jau-Wen Lin
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/76199692200756173301

碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 95 === In this study, PZT(52/48) thin films were deposited by RF magnetron sputtering on Pt/Ti/SiO2/Si substrate under different deposition power and annealing temperature. The purpose of this reserch is to obtain a full perovskite structure and smooth surface PZT thin films with optimal electric-mechanical properties. The crystallization characteristics were determined by X-Ray diffraction. The micrographs of the surfaces and cross-sections of PZT thin films were observed by scanning electron microscopy and EDS to component analysis. A Precision Impedance Analyzer (HP-4194) is use to measure the capacitance, resonance frequency, antiresonance and equivalent resistance. The dielectric constant, electromechanical coupling factor and mechanical quality factor are calculated to determine the electrical properties of the PZT. According to the experimental result, the PZT thin film deposited at RF- power 300 W and annealed at 650 ℃ for 30 minute has best surface profile. Also MPB composition and full perovskite structure can be observed at the deposition conditions. According to the electrical properties measurement results, the piezoelectricity increase with increased film thickness, but the increase rate decrease as the thickness increase. The electromechanical coupling factor is optimal at the thin film thickness of 700 nm according to the Kp measurement work. Superinduce others elements into the ceramic target in the future will enhance the electromechanical coupling factor and mechanical quality factor to match micro sensor device by piezoelectric thin films.