| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 95 === In this thesis, nano gold particles made from different process are used in inducing anisotropic amorphous silicon ( a-Si ) thin film to crystallize polycrystalline silicon ( poly-Si ) films for application on optpelectronic device. Plasma enhanced chemical vapor deposition ( PECVD ) is used to growa-Si on the surface of the wafer, and then nano gold particles made from different process with different parameters coated on the a-Si films. Finally, the a-Si films with nano gold particle are annealed with different temperatures to relive the thermal stress.
In ths study, transmission electron microscopy (TEM) is used to observe the size of nano metal particles, and then the dynamic light scattering (DLS) is used to analyze the distribution of nano metal particles. XRD and Raman spectra analysis are used to identify the crystallinity of specimens made under different annealing time and temperatures. The surface and cross-section observation are observed and discussed via the field emission scanning electron microscopy (FE-SEM). Finally, carrier mobility of the induced polysilicon film is examined by Hall measurement and the the magnitude of leakage current of poly silicon film characterized by semiconductor analyzer HP4145 in our study.
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