Investigation of Raised Germanium p+-n Junction Structures
碩士 === 逢甲大學 === 電子工程所 === 95 === This thesis is divided into two parts to present my experimental results. Firstly, we use raised structures with different materials including Si, SiGe and Ge in diodes by selective epitaxial growth. We find that the use of pure Ge for raised structure will cause ser...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46305649568788742885 |