Dopping of Sub-Nanosensitizers and Gas-Sensing Strengthening Behaviors for Sputter Deposited Tungsten Oxide Thin Films

• Main Authors: Keng-ming Kuo, 郭耿銘
• Other Authors: G. S. Chen
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/71394862724411629587

碩士 === 逢甲大學 === 產業研發碩士班 === 95 === The research use reactive (Ar/O2) magnetron sputtering system deposit semiconductive tungsten oxide (WO3) gas-sensing thin films on single crystal silicon substrate, and then take the processing of oxygen thermally stabilized, vacuum plasma surface modification and electrochemical nano-sized nickel particles absorption, respectively. The purpose is to tune the crystallinity of WO3 thin film and the density of surface absorption particles in order to strengthen the ability of thin film gas-sensing devices. Grazing X-ray diffraction, scanning electron spectroscope and transmission electron spectroscope all bring the evidences that as-deposited WO3 thin films have nano structure with bad crystallinity and unapparently distributed grains, but the crystalline obviously transform to square structure α-WO3 after thermally stabilized processing; then though plasma surface modification, the surface can absorb densely distributed nickel particles with 3~5 nm size by electrochemical deposition process patent. Resistance variation of gas sensor also verify that the improvement of crystallinity, absorption of nickel particles sensitizer and proper temperature tunes all can improve sensitivity, responsibility and reversibility, and sensitive properties still in act on super dilute NO2 (1 ppm). The gas-sensing mechanism affected by the three factors (improvement of crystallinity, plasma surface modification/micro-particles sensitizers and temperature control) will discuss in this article together.